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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Name: FGA25N120ANTD Power Mosfet Transistor New amp Original 1200V NPT Trench IGBT
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : FGA25N120ANTD

Certification : new & origianl

Place of Origin : original factory

MOQ : 10 pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 4800pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector-Emitter Voltage : 1200 V

Gate-Emitter Voltage : ± 20 V

Pulsed Collector Current : 90 A

Diode Maximum Forward Current : 150 A

Operating Junction Temperature : -55 to +150 °C

Storage Temperature Range : -55 to +150 °C

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FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Absolute Maximum Ratings

Symbol	Description	FGA25N120ANTD	Units
V_CES	Collector-Emitter Voltage	1200	V
V_GES	Gate-Emitter Voltage	± 20	V
I_C	Collector Current @ TC = 25°C	50	A
I_C	Collector Current @ TC = 100°C	25	A
I_CM	Pulsed Collector Current (Note 1)	90	A
I_F	Diode Continuous Forward Current @ TC = 100°C	25	A
I_FM	Diode Maximum Forward Current	150	A
P_D	Maximum Power Dissipation @ TC = 25°C	312	W
P_D	Maximum Power Dissipation @ TC = 100°C	125	W
T_J	Operating Junction Temperature	-55 to +150	°C
T_stg	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	°C

Mechanical Dimensions

TO-3PN

FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Product Tags:

npn smd transistor

multi emitter transistor

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